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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR08AS-8
OUTLINE DRAWING
Dimensions in mm
4.4±0.1 1.6±0.2
1.5±0.1
2.5±0.1
1
2
3
0.8 MIN
0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 0.4 +0.03 –0.05
• • • •
IT (RMS) ..................................................................... 0.8A VDRM ....................................................................... 400V IFGT !, IRGT !, IRGT # ............................................. 5mA IFGT # .....................................................................
BCR08AS-8 Datasheet
