Datasheet4U Logo Datasheet4U.com

HT0808-30A - GaN Hybrid Power Amplifier

Datasheet Summary

Description

The HT0808-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 869 ~ 894MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency.

High In/Output impedance, High power density.

Features

  • GaN on SiC HEMT.
  • In/Out Impedance Matching.
  • Surface Mount Hybrid Type.
  • Small Size & Mass.
  • High Efficiency.
  • Low Cost.
  • Custom design available.

📥 Download Datasheet

Datasheet preview – HT0808-30A

Datasheet Details

Part number HT0808-30A
Manufacturer RFHIC
File Size 262.54 KB
Description GaN Hybrid Power Amplifier
Datasheet download datasheet HT0808-30A Datasheet
Additional preview pages of the HT0808-30A datasheet.

📁 Similar Datasheet

  • HT080A-NDOFB87 - Touch-Panel (Hantouch)
  • HT0018 - 10/100 Single Port Transformer Modules (BESTJOB)
  • HT01 - 8 - Channel Logic To High-Voltage Level Translator (Supertex Inc)
  • HT0130D - 8 - Channel Logic To High-Voltage Level Translator (Supertex Inc)
  • HT0130LC - 8 - Channel Logic To High-Voltage Level Translator (Supertex Inc)
  • HT0130P - 8 - Channel Logic To High-Voltage Level Translator (Supertex Inc)
  • HT0130WG - 8 - Channel Logic To High-Voltage Level Translator (Supertex Inc)
  • HT03A - Microtriggered low power thyristor (HTCSEMI)
  • HT0440 - Isolated MOSFET Driver (Supertex Inc)
  • HT057A-NDOFG45 - Touch-Panel (Hantouch)
Other Datasheets by RFHIC

Full PDF Text Transcription

Click to expand full text
GaN Hybrid Power Amplifier HT0808-30A Product Features • GaN on SiC HEMT • In/Out Impedance Matching • Surface Mount Hybrid Type • Small Size & Mass • High Efficiency • Low Cost • Custom design available Applications • RF Sub-Systems • Base Station • Repeater • LTE system Package Type : NP-1EL Description The HT0808-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 869 ~ 894MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density. Electrical Specifications @ Vds =28V, Ta=25℃ PARAMETER UNIT MIN TYP MAX Frequency Range MHz 869 - 894 Power Gain 35 37 39 Gain Flatness dB - 0.3 1.
Published: |