HT1818-30A Key Features
- GaN on SiC HEMT
- In/Out Impedance Matching
- Surface Mount Hybrid Type
- Small Size & Mass
- High Efficiency
- Low Cost
- Custom design available
- Part: HT1818-30A
- Manufacturer: RFHIC
- Size: 264.42 KB
Related RFHIC Datasheets
| Part Number | Description |
|---|---|
| HT1818-15A | GaN Hybrid Power Amplifier |
| HT1818-15M | GaN Hybrid Power Amplifier |
HT1818-30A Description
The HT1818-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 ~ 1880MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density. Turn on the Gate Voltage supply and last turn On the Drain voltage supplies Turn off.