RFHIC HT1818-15M
The HT1818-15M is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 to 1880MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency.| Part No. | HT1818-15M |
|---|---|
| Datasheet | HT1818-15M Download |
| Manufacturer |  RFHIC |
| Description | GaN Hybrid Power Amplifier |
| Buy | Stock & Price |
FEATURES
● E-pHEMT GaAs + GaN on SiC● 2-Stage Amplifier 50ohms Matching
● Surface Mount Hybrid Type
● Small Size & Mass
● High Efficiency
APPLICATIONS
● RF Sub-Systems● Base Station
● Repeater
● 4G/LTE system
● Small cell Package Type : NP-1EL
DESCRIPTION
High In/Output impedance, High power density.ELECTRICAL SPECIFICATIONS
@ Vds1 =5V, Vds2 =28V, Ta=25℃ PARAMETER UNIT MIN TYP MAX Frequency Range MHz 1805 - 1880 Power Gain - 34 - Gain Flatness dB - 0.8 1.5 Input Return Loss - -9 -6 Pout @ Average dBm - 33 - Pout @ Psat dBm 40.5 41.5 - ACLR @ BW 10MHz LTE (PAPR 7.5dB) dBc - -39 -30 -54 - Drain Efficiency % - 27 - Ids1 - 140 mA Ids2 - 240 - -5- Supply Voltage V - -3.0 -2.0 - 28 - Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate Voltage supply and last turn on the Drain voltage supplies Turn off : Turn off the Drain Voltage and last turn off the Gate voltage Note 1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180) 2.
