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GaN Hybrid Power Amplifier HT1818-30A
Product Features
• GaN on SiC HEMT • In/Out Impedance Matching • Surface Mount Hybrid Type • Small Size & Mass • High Efficiency • Low Cost • Custom design available
Applications
• RF Sub-Systems • Base Station • Repeater • LTE system
Package Type : NP-1EL
Description
The HT1818-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 ~ 1880MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density.
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
1805
-
1880
Power Gain
36 38 40
Gain Flatness
dB -
0.