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HT1818-30A - GaN Hybrid Power Amplifier

General Description

The HT1818-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 ~ 1880MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency.

High In/Output impedance, High power density.

Key Features

  • GaN on SiC HEMT.
  • In/Out Impedance Matching.
  • Surface Mount Hybrid Type.
  • Small Size & Mass.
  • High Efficiency.
  • Low Cost.
  • Custom design available.

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Datasheet Details

Part number HT1818-30A
Manufacturer RFHIC
File Size 264.42 KB
Description GaN Hybrid Power Amplifier
Datasheet download datasheet HT1818-30A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaN Hybrid Power Amplifier HT1818-30A Product Features • GaN on SiC HEMT • In/Out Impedance Matching • Surface Mount Hybrid Type • Small Size & Mass • High Efficiency • Low Cost • Custom design available Applications • RF Sub-Systems • Base Station • Repeater • LTE system Package Type : NP-1EL Description The HT1818-30A is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 ~ 1880MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density. Electrical Specifications @ Vds =28V, Ta=25℃ PARAMETER UNIT MIN TYP MAX Frequency Range MHz 1805 - 1880 Power Gain 36 38 40 Gain Flatness dB - 0.