RTP21025-10 Key Features
- Doherty amplifier design
- GaN on SiC HEMT
- Small and light weight
- 50 Ohm Input/Output impedance matched
- Highly reliable and rugged design
- High efficiency, High Gain
- 25W typical PAVG
- WCDMA & LTE DPD amplifier
- General purpose RF amplifier
- ± 1.0 ± 2 dB