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RTP21025-10 - GaN-SiC Pallet Amplifier

General Description

The RTP21025-10 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain.

This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high efficiency.

The RTP21025-10 is DPD application amplifier.

Key Features

  • Doherty amplifier design.
  • GaN on SiC HEMT.
  • Small and light weight.
  • 50 Ohm Input/Output impedance matched.
  • Highly reliable and rugged design.
  • High efficiency, High Gain.
  • 25W typical PAVG.

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Datasheet Details

Part number RTP21025-10
Manufacturer RFHIC
File Size 315.16 KB
Description GaN-SiC Pallet Amplifier
Datasheet download datasheet RTP21025-10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary GaN-SiC Pallet Amplifier RTP21025-10 Product Features • Doherty amplifier design • GaN on SiC HEMT • Small and light weight • 50 Ohm Input/Output impedance matched • Highly reliable and rugged design • High efficiency, High Gain • 25W typical PAVG Application • WCDMA & LTE DPD amplifier • General purpose RF amplifier Description The RTP21025-10 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain. This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high efficiency. The RTP21025-10 is DPD application amplifier.