SGC2363Z Datasheet | RF Micro Devices

Description RFMD’s SGC2363Z is a high performance Si Ge HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC2363Z does not require a dropping resistor as pared to typical Darlington amplifiers. The SGC2363Z is designed for high linearity 3V gain block applications that require small size and minimal external ponents. It is internally matched to 50. Optimum Technology Matching® Applied Ga As HBT Ga As MESFET In Ga P HBT Si Ge Bi CMOS Si Bi CMOS - Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT RF MEMS Gain, RL (d B) Gain & Return Loss VD = 3V, ID = 26m A 30 S21 10 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C -10 S22 -20 S11 -30 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) Features - Single, Fixed 3V Supply - No Dropping Resistor Required - Patented Self-Bias Circuitry - P1d B=10.1d Bm at 1950MHz - OIP3=23d Bm at 1950MHz - Robust 1000V ESD, Class 1C Applications - PA Driver Amplifier - Cellular, PCS, GSM, UMTS, WCDMA - IF Amplifier - Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Small Signal Gain 18.5 d B...