RF2114 Datasheet | RF Micro Devices

Description The RF2114 is a medium to high power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 1MHz and 600MHz. It may also be used as a driver amplifier in higher power applications. The device is selfcontained with the exception of the output matching network, power supply feed line, and bypass capacitors. The device can be used in 3-cell battery applications. The maximum CW output at 3V is 125m W. The unit has a total gain of 35d B, depending upon the output matching network. 0.156 0.148 .018 .014 0.010 0.004 0.347 0.339 0.050 0.252 0.236 8° MAX 0° MIN 0.059 0.057 0.0500 0.0164 0.010 0.007 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ! Package Style: SOIC-14 Ga As HBT Si Ge HBT Ga As MESFET Si CMOS Features - 1MHz to 600MHz Operation - Over 800m W CW Output Power - 35d B Small Signal Gain - Single 2.7V to 6.5V Supply RF1 IN GND GND PD RF2 IN RF1 OUT VCC1 1 2 3 4 5 PA 6 7 BIAS CIRCUIT 14 13 12 11 10 9 8 RF2 OUT RF2 OUT GND GND GND RF2 OUT RF2 OUT PRE AMP - 45% Efficiency - Digitally Controlled Power Down Mode Ordering Information RF2114 RF2114 PCBA Medium Power Linear Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://.rfmd. Rev A5 001222 2-33 Absolute Maximum Ratings Parameter Supply Voltage Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Operating Ambient Temperature Storage Temperature Rating -0.5 to +8.5 -0.5 to +5.0 500 +12 20:1 -40 to +85 -40 to...