RF2115L Datasheet PDF - RF Micro Devices HIGH POWER UHF AMPLIFIER Specs

RF2115L - HIGH POWER UHF AMPLIFIER

Datasheet Summary

Description

The RF2115L is a high power amplifier IC.

The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz.

Datasheet Details

Part number	RF2115L
Manufacturer	RF Micro Devices
File Size	95.59 KB
Description	HIGH POWER UHF AMPLIFIER
Datasheet	RF2115L Datasheet
Additional preview pages of the RF2115L datasheet.

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Full PDF Text Transcription

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RF2115L 2 HIGH POWER UHF AMPLIFIER Typical Applications • Analog Communication Systems • Analog Cellular Systems (AMPS & TACS) • 900MHz Spread-Spectrum Systems • 400MHz Industrial Radios • Driver Stage for Higher Power Applications • Portable Battery-Powered Equipment 2 POWER AMPLIFIERS Product Description The RF2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz. The device is packaged in a 16-lead ceramic quad leadless chip carrier with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line.

Published: Jan 14, 2018 |