RF Micro Devices RF2114
The RF2114 is a medium to high power linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final linear RF amplifier in UHF radio transmitters operating between 1MHz and 600MHz. It may also be used as a driver amplifier in higher power applications.| Part No. | RF2114 |
|---|---|
| Datasheet | RF2114 Download |
| Manufacturer |  RF Micro Devices |
| Description | MEDIUM POWER LINEAR AMPLIFIER |
| Buy | Stock & Price |
APPLICATIONS
● Digital Communication Systems● Portable Battery-Powered Equipment
● Spread-Spectrum Communication Systems
● Commercial and Consumer Systems
● Driver for Higher Power Linear
APPLICATIONS
● Base Station Equipment MEDIUM POWER LINEAR AMPLIFIER 2 POWER AMPLIFIERS ProductDESCRIPTION
The device is selfcontained with the exception of the output matching network, power supply feed line, and bypass capacitors. The device can be used in 3-cell battery applications. The maximum CW output at 3V is 125mW. The unit has a total gain of 35dB, depending upon the output matching network. 0.156 0.148 .018 .014 0.010 0.004 0.347 0.339 0.050 0.252 0.236 8° MAX 0° MIN 0.059 0.057 0.0500 0.0164 0.010 0.007 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ! Package Style: SOIC-14 GaAs HBT SiGe HBT GaAs MESFET Si CMOSFEATURES
● 1MHz to 600MHz Operation● Over 800mW CW Output Power
● 35dB Small Signal Gain
● Single 2.7V to 6.5V Supply RF1 IN GND GND PD RF2 IN RF1 OUT VCC1 1 2 3 4 5 PA 6...