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RF2336 - GENERAL PURPOSE AMPLIFIER

Description

The RF2336 is a general purpose, low-cost RF amplifier IC.

The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block.

Features

  • DC to 3000MHz Operation.
  • Internally matched Input and Output.
  • 20dB Small Signal Gain.
  • 3.8dB Noise Figure.
  • 10mW Linear Output Power.
  • Single Positive Power Supply GND 1 GND 2 RF IN 3 5 RF OUT 4 GND Ordering Information RF2336 RF2336 PCBA General Purpose Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.

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Datasheet Details

Part number RF2336
Manufacturer RF Micro Devices
File Size 40.77 KB
Description GENERAL PURPOSE AMPLIFIER
Datasheet download datasheet RF2336 Datasheet
Additional preview pages of the RF2336 datasheet.

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Full PDF Text Transcription

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RF2336 4 Typical Applications • Broadband, Low Noise Gain Blocks • IF or RF Buffer Amplifiers • Driver Stage for Power Amplifiers • Final PA for Low Power Applications • Broadband Test Equipment GENERAL PURPOSE AMPLIFIER Product Description The RF2336 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 3000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC biasing elements to operate as specified.
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