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RF3928 Datasheet 300W GaN Wide-Band Pulsed Power Amplifier

Manufacturer: RF Micro Devices (now Qorvo)

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General Description

The RF3928 is a 50V 300W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications.

Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package.

The RF3928 is a matched GaN transistor packaged in a hermetic, flanged ceramic package.

Overview

Proposed RF3928 300W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2.

Key Features

  • Wideband Operation 2.8GHz to 3.4GHz.
  • Advanced GaN HEMT Technology.
  • Advanced Heat-Sink Technology.
  • Optimized Evaluation Board Layout for 50ohm Operation.
  • Integrated matching components for high terminal impedances.
  • 50V Operation Typical Performance o Pulsed Output Power 300W o Small Signal Gain 11dB o Drain Efficiency 50% o -40oC to 85oC Operating Temperature.

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