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RF3934 Datasheet Gan Wide-band Power Amplifier

Manufacturer: RF Micro Devices (now Qorvo)

Overview: .. Proposed RF3934 GaN WIDE-BAND POWER AMPLIFIER RoHS pliant and Pb-Free Product Package Style: Flanged.

General Description

The RF3934 is designed for mercial infrastructure, cellular and WiMAX infrastructure and general purpose broadband amplifier applications.

Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design.

The RF3934 is an unmatched GaN transistor packaged in a flanged ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.

Key Features

  • Peak Power=120W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50 Ω Operation Commercial Wireless Infrastructure Cellular and WiMAX Infrastructure General Purpose Broadband Amplifiers Public Mobile Radios Industrial, Scientific and Medical RF IN VGQ Pin 1 (CUT) GND BASE RF OUT VDQ Pin 2.

More Datasheets from RF Micro Devices (now Qorvo)

Part Number Description
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RF3934 Distributor