RFAM3790 - EDGE QAM INTEGRATED AMPLIFIER

Product Overview

RF Micro Devices

Datasheet Details

Part number	RFAM3790
Manufacturer	RF Micro Devices
File Size	287.73 KB
Description	EDGE QAM INTEGRATED AMPLIFIER
Datasheet	RFAM3790 Datasheet
Additional preview pages of the RFAM3790 datasheet.

Product details

Description

optional to improve matching in application Capacitor, X7R, 50V, 10% optional to improve matching in application Resistor, TK200, 5% Impedance Bead, DCR 0.1Ohm, 800mA ESD Protection Zener Diode, 200mW Transient Suppressor Diode, 5% Transformer Transformer Transformer Amplifier Manufacturer Taiyo Yuden Triquint On Semiconductor Diotec RFMD RFMD RFMD RFMD Part Number BK 1608HS600-T TQP200002 MM3Z5V6T1G TGL34-33A RFXF0006 RFXF0008 RFXF0009 RFAM3790 RF Micro Devices Inc.7628 Thorndike Road, Gree

Features

Excellent Linearity.
Extremely High Output Capability.
Voltage Controlled Attenuator.
Power Enable Featrure.
Extremely Low Distortion.
Optimal Reliability.
Low Noise.
Unconditionally Stable Under all Terminations.
27.5 dB Typical Gain at 1218MHz.
410mA Typical at 12VDC.

📁 Similar Datasheet

RFA0E331MCN1GS - Functional Polymer Aluminum Solid Electrolytic Capacitors (Nichicon)
RFA100 - (RFA100 / RFA150) SURFACE MOUNT RF POWER ATTENUATORS (NIKKOHM)
RFA150 - SURFACE MOUNT RF POWER ATTENUATORS (NIKKOHM)
RFANT5220110A0T - 2.4 GHz ISM Band Working Frequency (ETC)

Other Datasheets by RF Micro Devices

RFAM2790 - 45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier

Published: Apr 5, 2016 |