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RFAM3790 Datasheet EDGE QAM INTEGRATED AMPLIFIER

Manufacturer: RF Micro Devices (now Qorvo)

Overview

RFAM3790 45-1218MHZ GAAS EDGE QAM INTEGRATED AMPLIFIER The RFAM3790 is an Integrated Edge QAM Amplifier Module.

The part employs GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45MHz to 1218MHz.

It provides excellent linearity and superior return loss performance with low noise and optimal reliability.

Key Features

  • Excellent Linearity.
  • Extremely High Output Capability.
  • Voltage Controlled Attenuator.
  • Power Enable Featrure.
  • Extremely Low Distortion.
  • Optimal Reliability.
  • Low Noise.
  • Unconditionally Stable Under all Terminations.
  • 27.5 dB Typical Gain at 1218MHz.
  • 410mA Typical at 12VDC.