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RFAM2790 - 45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier

General Description

The RFAM2790 is an integrated edge QAM amplifier module.

The part employs GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45MHz to 1003MHz.

Key Features

  • Excellent Linearity.
  • Extremely High Output Capability.
  • Voltage Controlled Attenuator.
  • Power Enable Feature.
  • Optimal Reliability.
  • Low Noise.
  • Unconditionally Stable Under all Terminations.
  • 27dB Typical Gain at 1003MHz.
  • 410mA Typical at 12VDC.

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Other Datasheets by RF Micro Devices (now Qorvo)

Part Number Description
RFAM3790 EDGE QAM INTEGRATED AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFAM2790 45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier RFAM2790 45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier Package: 9-pin, 11.0mm x 11.0mm x 1.375mm POWER ENABLE V+ Features  Excellent Linearity  Extremely High Output Capability  Voltage Controlled Attenuator  Power Enable Feature  Optimal Reliability  Low Noise  Unconditionally Stable Under all Terminations  27dB Typical Gain at 1003MHz  410mA Typical at 12VDC Applications  45MHz to 1003MHz Downstream Edge QAM RF Modulators  Headend Equipment INPUT OUTPUT Preamp Driver ATTENUATOR ADJUST Functional Block Diagram Product Description The RFAM2790 is an integrated edge QAM amplifier module.