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RFAM3790 - EDGE QAM INTEGRATED AMPLIFIER

General Description

optional to improve matching in application Capacitor, X7R, 50V, 10% optional to improve matching in application Resistor, TK200, 5% Impedance Bead, DCR 0.1Ohm, 800mA ESD Protection Zener Diode, 200mW Transient Suppressor Diode, 5% Transformer Transformer Transformer Amplifier Manufacturer Taiyo Yu

Key Features

  • Excellent Linearity.
  • Extremely High Output Capability.
  • Voltage Controlled Attenuator.
  • Power Enable Featrure.
  • Extremely Low Distortion.
  • Optimal Reliability.
  • Low Noise.
  • Unconditionally Stable Under all Terminations.
  • 27.5 dB Typical Gain at 1218MHz.
  • 410mA Typical at 12VDC.

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Other Datasheets by RF Micro Devices (now Qorvo)

Part Number Description
RFAM2790 45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFAM3790 45-1218MHZ GAAS EDGE QAM INTEGRATED AMPLIFIER The RFAM3790 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Power Enable V+ INPUT OUTPUT Preamp Driver Att.