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RF Micro Devices

RFMD2080 Datasheet Preview

RFMD2080 Datasheet

IQ MODULATOR

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RFMD2080RFMD2080
45MHz TO 2700MHz IQ MODULATOR WITH
SYNTHESIZER/VCO AND BASEBAND INTERFACE
Package: QFN, 32-Pin, 5mm x 5mm
Features
RF Output Frequency Range
45MHz to 2700MHz
Fractional-N Synthesizer with
Very Low Spurious Levels
Typical Step Size 1.5Hz
Fully Integrated Wideband VCOs
and LO Buffers
Integrated Phase Noise
<0.2° rms at 1GHz
Integrated Baseband
Amplification Stage with Variable
Gain and Filtering
Tunable Baseband Filters Input
3dB Bandwidth from 1.5MHz to
10MHz
-45dBc Unadjusted Carrier
Suppression
-40dBc Unadjusted Sideband
Suppression
Very Low Noise Floor
-150dBm/Hz Typical
Output P1dB +4dBm
Output IP3 +18dBm
3.0V to 3.3V Power Supply
155mA Typical Current
Consumption
Serial Programming Interface
Applications
Satellite Communications
QPSK/QAM Modulators
SSB Modulators
Software Defined Radios
Phase
det .
Synth
Ref.
divider
Functional Block Diagram
Product Description
The RFMD2080 is a low power, highly integrated, IQ modulator with integrated fractional-N syn-
thesizer and voltage controlled oscillator (VCO). The RFMD2080 can generate output frequen-
cies of between 45MHz and 2700MHz, making it suitable for a wide range of applications.
The fractional-N synthesizer takes advantage of an advanced sigma-delta architecture that
delivers ultra-fine step sizes and low spurious products. The synthesizer/VCO combined with an
external loop filter allows the user to generate an oscillator signal covering 90MHz to 5400MHz.
The signal is buffered and routed to a high accuracy quadrature divider (/2) that drives the bal-
anced I and Q mixers. The output of the mixers are summed and applied to a differential RF out-
put stage. The device also features a differential input for an external VCO or LO source.
The baseband I and Q stages are highly integrated; featuring variable gain and filtering as well
as generation of DC offset voltages. The programmable DC offsets enable improved carrier sup-
pression. The baseband input 3dB bandwidth can be tuned from 1.5MHz to 10MHz, and the
total gain control range is 38dB with 2dB resolution.
Device programming is achieved via a simple 3-wire serial interface. In addition, a unique pro-
gramming mode allows up to four devices to be controlled from a common serial bus. This elim-
inates the need for separate chip-select control lines between each device and the host
controller. Up to six general purpose outputs are provided, which can be used to access internal
signals (the LOCK signal, for example) or to control front end components. The device is opti-
mized for low power operation, consuming typically only 155mA from a 3V supply.
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
DS140110
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2011, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 19




RF Micro Devices

RFMD2080 Datasheet Preview

RFMD2080 Datasheet

IQ MODULATOR

No Preview Available !

RFMD2080
Absolute Maximum Ratings
Parameter
Supply Voltage (VDD)
Input Voltage (VIN), any pin
LO Input Power
Operating Temperature Range
Storage Temperature Range
Rating
-0.5 to +3.6
-0.3 to VDD+0.3
+15
-40 to +85
-65 to +150
Unit
V
V
dBm
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Parameter
ESD Requirements
Human Body Model
Charge Device Model
Operating Conditions
Supply Voltage (VDD)
Temperature
Logic Inputs/Outputs
(VDD = Supply to DIG_VDD pin)
Input Low voltage
Input High voltage
Input Low current
Input High current
Output Low voltage
Output High voltage
Load Resistance
Load Capacitance
GPO Drive Capability
Sink Current
Source Current
Output Impedance
Static
Supply Current (IDD)
Standby
Power Down Current
Specification
Min. Typ. Max.
2000
1500
1000
3.0 3.3
-40 +85
Unit
V DC Pins
V All Pins
V All Pins
V
°C
Condition
-0.3
VDD / 1.5
-10
-10
0
0.8*VDD
10
+0.5
VDD
+10
+10
0.2*VDD
VDD
20
20
20
25
155
2
300
V
V
A Input = 0V
A Input = VDD
V
V
K
pF
mA At VOL = +0.6V
mA At VOH = +2.4V
mA
mA Reference Oscillator and Bandgap Only
A ENBL = 0 and REF_STBY = 0
2 of 19
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS140110


Part Number RFMD2080
Description IQ MODULATOR
Maker RF Micro Devices
Total Page 19 Pages
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