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RF Micro Devices

RFPA2002 Datasheet Preview

RFPA2002 Datasheet

Integrated Power Amplifier Module

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RFPA2002
RFPA2002
Integrated Power Amplifier
1750MHz to 2200MHz
The RFPA2002 has over 28dB of small signal gain over 1750MHz
to 2200MHz. When used with DPD at 3.3V, the RFPA2002 can
deliver 24dBm LTE Downlink (CFR 7.5dB) with ACPR <-50dBc.
Two digital control pins select high, medium or low power modes if
desired to optimize performance and current drain at different
power levels. The RFPA2002 has an integrated directional
coupler, integrated biasing circuitry, and integrated matching to
50. No external DC blocking is required as the RF pins are at
DC ground.
VBAT 1
RF IN 2
VMODE1/GND 3
VMODE0 4
VEN 5
Bias,
mode &
enable
controls
Functional Block Diagram
10 VCC
9 RF OUT
8 CPL IN
7 GND
6 CPL OUT
Ordering Information
RFPA2002SQ
Sample bag with 25 pieces
RFPA2002SR
7" Reel with 100 pieces
RFPA2002TR7
7" Reel with 2500 pieces
RFPA2002PCK-410 700MHz to 950MHz PCBA with 5-piece sample
bag
RFPA2002
Package: MCM, 10-pin,
2.0mm x 2.5mm x 0.9mm
Features
POUT = 24dBm, 25% PAE, with
3.3V, 20MHz LTE DL, CFR 7.5dB
ACP <-50dBc with DPD
28dB Gain over 1750MHz to
2200MHz
Instantaneous P3dB = 32dBm at
3.3V
Designed to Support Flexible VCC
0.5V to 4.5V for PAE Optimization
Envelope Tracking Compatible
Integrated Power Coupler
Integrated 50Matching
Integrated Biasing
No External DC Block Needed
3 Power Mode Operation
GPIO Interface
Ultra Small and Low Profile
Applications
Power Amplifier, Power Amplifier
Driver
Small Cell Base Stations
Wideband Instrumentation
Customer Premise Equipment
Data Cards
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS150209
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
1 of 12




RF Micro Devices

RFPA2002 Datasheet Preview

RFPA2002 Datasheet

Integrated Power Amplifier Module

No Preview Available !

RFPA2002
Absolute Maximum Ratings
Parameter
Supply Voltage in Standby Mode
Supply Voltage in Idle Mode
Supply Voltage in Operating Mode
Supply Voltage, VBATT
Control Voltage, VEN, VMODE0, VMODE1
RF Input Power (CW, VCC = 3.3V, 50Load)
RF Output Power (CW, 50Ω Load)
Output Load VSWR (LTE DL 7.5dB CFR, VCC = 4.5V,
PFORWARD <24dBm)
ESD Rating, All Pins, HBM, JESD22-A114
ESD Rating, All Pins, CDM, JESD22-C101
Moisture Sensitivity Level
Rating
6.0
6.0
6.0
6.0
3.5
+10
+30
8:1
2000
1000
MSL3
Unit
V
V
V
V
V
dBm
dBm
V
V
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of antimony
trioxide in polymeric materials and red
phosphorus as a flame retardant, and
<2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Recommended Operating Condition
Parameter
Operating Temperature Range
Operating Junction Temperature
VBATT
VCC1
Specification
Min Typ Max
-30 +25 +85
125
+3 +3.3 +4.5
+0.5
+3.3
+4.5
Unit
°C
°C
V
V
Note: VCC down to 0.5V may be used for backed-off power when using DC-DC converter to conserve battery current.
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
Condition
General Performance
Operating Frequency
VEN, Low Level
VEN, High Level
VMODE0, VMODE1, Low Level
VMODE0, VMODE1, High Level
Maximum Linear Output POUT1, 2
Thermal Resistance
1750
2200 MHz
0 0.5 V PA Disabled
1.5 1.8 3
V PA Enabled
0 0.5
1.5 1.8 3
V For logic “low”
V For logic “high”
24 dBm High power mode (HPM); VCC = 3.3V
37 °C/W To backside of evaluation board
Notes:
1.
2.
For operation at VBATT = 3.0V, de-rate POUT by 2.0dB
POUT is specified for 20MHz LTE downlink with CFR 7.5dB, -50dBc ACPR using digital or analog pre-distortion
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS150209
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
2 of 12


Part Number RFPA2002
Description Integrated Power Amplifier Module
Maker RF Micro Devices
Total Page 12 Pages
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