Datasheet4U Logo Datasheet4U.com

RFPA2172 Datasheet Medium-power High Efficiency Amplifier Ic

Manufacturer: RF Micro Devices (now Qorvo)

Overview: RFMD + TriQuint = Qorvo RFPA2172 ISM Band 3.6V, 250mW AMP with Analog Gain Control The RFPA2172 is a medium-power high efficiency amplifier IC targeting 3.6 V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45 GHz Bluetooth applications and frequency hopping/direct sequence spreadspectrum cordless telephones or other applications in the 902 MHz to 928 MHz ISM band. The device is packaged in a pact 4 mm x 4 mm QFN.

Key Features

  • analog gain control to optimize transmit power while maximizing battery life in portable equipment requiring up to 100 mW transmit power at the antenna port. GND GND VCC GND GND 1 16 15 14 13 GND 2 12 RF OUT RF IN 3 11 RF OUT GND 4 Bias 10 GND 56789 GND GND APC VPD GND Functional Block Diagram RFPA2172 Package: QFN, 16-pin, 4.0mm x 4.0mm Features.
  • 23.5dBm Typical Output Power.
  • 0dB to 28dB Variable Gain.
  • 45% Efficiency at Max Output.
  • On-Board Power Down Mode.

More Datasheets from RF Micro Devices (now Qorvo)

Part Number Description
RFPA2189 GaAs HBT POWER AMPLIFIER
RFPA2002 Integrated Power Amplifier Module
RFPA2005 Integrated Power Amplifier Module
RFPA2013 GaAs HBT Power Amplifier
RFPA2016 3-stage HBT power amplifier module
RFPA2026 3-Stage Power Amplifier Module
RFPA2224 Single-Stage Power Amplifier
RFPA2226 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
RFPA2235 Single-Stage Power Amplifier
RFPA2545 Broadband 4W GaAs HBT Power Amplifier

RFPA2172 Distributor