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RFPA2005 Datasheet Preview

RFPA2005 Datasheet

Integrated Power Amplifier Module

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RFPA2005
Integrated Power Amplifier Module
1805MHz to 2170MHz
The RFPA2005 is a two-stage power amplifier (PA) designed for
Small Cell Base Stations. Its broadband quadrature design
supports usage in multiple bands with excellent output return loss
and load tolerance. When used with DPD, the RFPA2005 delivers
up to 24dBm LTE Downlink (CFR 8dB) with ACPR < -50dBc.
VCC1 GND NC GND
16 15 14 13
GND 1
12 VCC2
RFIN 2
Split
IMN
Combine
OMN
11 NC
GND 3
10 GND
GND 4
Bias
Circuitry
9 RFOUT
5
VBIAS
6
VEN
7
GND
8
GND
Functional Block Diagram
RFPA2005
Package: Module, 16-pin,
5.0mm x 5.0mm x 1.175mm
Features
POUT = 24dBm, 22% PAE, with
3.3V, 20MHz LTE DL, CFR 8dB
ACPR < -50dBc with DPD
25dB Gain in Band 4(1)
Integrated Matching to 50
Integrated DC Block Capacitors
Broadband Quadrature Design
Excellent Output Return Loss
Covers 3GPP Downlink in Bands:
2(25), 3, 4(1)
VSWR Tolerant, Load Insensitive
Applications
Small Cell Base Stations
Data Cards with Terminals
Customer Premise Equipment
Ordering Information
RFPA2005SQ
Sample bag with 25 pieces
RFPA2005SR
7" Reel with 100 pieces
RFPA2005TR13
13" Reel with 2500 pieces
RFPA2005PCK-410 1805MHz to 2170MHz PCBA with 5-piece sample
bag
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS141031
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
1 of 9




RF Micro Devices

RFPA2005 Datasheet Preview

RFPA2005 Datasheet

Integrated Power Amplifier Module

No Preview Available !

Absolute Maximum Ratings
Parameter
DC Supply Voltage, VCC1, VCC2 (POUT <24dBm, VSWR < 5:1)
Enable Control Logic, VEN
CW Maximum RF Input Power into 50Load (VCC =3.3V)
Storage Temperature Range
Moisture Sensitivity Level (260° JEDEC J-STD-020)
Modulated (WCDMA) Input Power 6:1 Output VSWR (VCC =3.3V)
ESD Rating, All Pins, HBM, JESD22-A114
ESD Rating, All Pins, CDM, JESD22-C101
Rating
4.5
+2.2
+15
-40 to +150
MSL3
+10
2000
1000
Unit
VDC
VDC
dBm
°C
dBm
V
V
Recommended Operating Condition
Parameter
Operating Temperature Range
Operating Junction Temperature
Power Supply VCC1, VCC2,
Power Supply Vbias
Specification
Min Typ Max
-40 +85
165
3.15 3.3 3.45
3.3 3.3 3.45
Unit
°C
°C
V
V
Nominal Operating Parameters
Parameter
Specification
Min Typ Max
Unit
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of antimony
trioxide in polymeric materials and red
phosphorus as a flame retardant, and
<2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Condition
Operating Frequency Range
General Performance
VEN Range (Logic Low)
VEN Range (Logic High)
VEN Enable Current
Total Idle Current (ICQ)
VBIAS Current
DC Enable Time
RF Rise / Fall Time
Electrical Performance:
Band 4
Gain
1805
2170 MHz
0 0.4
1.4 1.9
0.2
135
59
7
2
25 26.5
V
V
mA VEN = 1.8V
mA DC only, VCC1 = VCC2 = 3.3V, VBIAS = 3.3V, VEN = 1.8V
mA DC only, VEN = 1.8V
µs DC only, time from VEN = high to stable idle current (90% of steady state
value)
µs POUT 24dBm, 90% of target, DC settled prior to RF
Unless otherwise specified; Temp = +25°C, VCC1, VCC2 = +3.3V,
VBias=+3.3V, VEN = +1.8V, POUT = 24dBm, 2110MHz < F <
2170MHz, 50system, 20MHz LTE DL with CFR 8dB
dB
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS141031
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
2 of 9


Part Number RFPA2005
Description Integrated Power Amplifier Module
Maker RF Micro Devices
Total Page 9 Pages
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