900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






RF Micro Devices

RFPA2016 Datasheet Preview

RFPA2016 Datasheet

3-stage HBT power amplifier module

No Preview Available !

RFPA2016
3-Stage Power Amplifier, 1W
700MHz to 2700MHz
The RFPA2016 is a 3-stage HBT power amplifier module with
high gain and excellent efficiency. External matching and bias
control allows the RFPA2016 to be optimized for various
applications including small-cell power amplifiers and ultra-linear
driver amplifiers within 700MHz and 2700MHz. Users can also
bypass the first stage to reduce gain and power consumption.
28 27 26 25 24 23 22
RFIN3 1
RFIN3 2
RFOUT2/Vcc2 3
RFOUT2/Vcc2 4
GND 5
GND 6
RFIN2 7
VBIAS
VREG3
AMP2
VREG2
VBIAS
VREG1
DETECTOR
VBIAS
VBIAS
VBIAS
BIAS
SWITCH
21 DET_OUT
20 VBIAS
19 VREG3
18 VREG2
17 VREG1
16 VPC_OUT
15 VPC_EN
8 9 10 11 12 13 14
E-pad
GND
Functional Block Diagram
Ordering Information
RFPA2016SQ
Sample bag with 25 pieces
RFPA2016SR
7" Reel with 100 pieces
RFPA2016TR13
13" Reel with 2500 pieces
RFPA2016PCK-410 728MHz to 768MHz PCBA with 5-piece sample
bag
RFPA2016PCK-411 2110MHz to 2170MHz PCBA with 5-piece sample
bag
RFPA2016PCK-412 2620MHz to 2690MHz PCBA with 5-piece sample
bag
RFPA2016
Package: MCM, 28-pin,
6.0mm x 6.0mm
Features
WCDMA Power at 2140MHz =
21dBm with -45dBc ACPR
Flexible External Matching for
Band Selection
Gain = 36dB at 2140MHz
P1dB = 31dBm at 2140MHz
5V Supply
Independent Bias Control for Each
Stage
Power-down Capability
Integrated Power Detector
Applications
2G, 3G, and 4G Air Interfaces
Picocell, Femtocell Power Amplifier
Module
Driver Amplifier for Commercial
Wireless Infrastructure
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS140317
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
1 of 25




RF Micro Devices

RFPA2016 Datasheet Preview

RFPA2016 Datasheet

3-stage HBT power amplifier module

No Preview Available !

Absolute Maximum Ratings1
Parameter
Supply Voltage (VCC, VBIAS, VEN )
Amp1 DC Current (ICC1)
Amp2 DC Current (ICC2)
Amp3 DC Current (ICC3)
CW Input Power, 50Ω, 2-Stage Operation
CW Input Power, 50Ω, 3-Stage Operation
Modulated (WCDMA) Input Power, 6:1 output VSWR, 2-Stage Operation
Modulated (WCDMA) Input Power, 6:1 output VSWR, 3-Stage Operation
Storage Temperature Range
ESD Rating - Human Body Model (HBM)
Moisture Sensitivity Level
Notes:
1. The maximum ratings must all be met simultaneously
Rating
6.0
100
250
800
1
18
-6
7
-40 to +150
Class 1A
MSL3
Unit
V
mA
mA
mA
dBm
dBm
dBm
dBm
°C
Caution! ESD sensitive device.
RFMD Green: RoHS status based on EU
Directive 2011/65/EU (at time of this
document revision), halogen free per IEC
61249-2-21, < 1000ppm each of antimony
trioxide in polymeric materials and red
phosphorus as a flame retardant, and
<2% antimony in solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Recommended Operating Condition
Parameter
Specification
Operating Temperature Range
Operating Junction Temperature (TJ)1& 2
Collector Voltage (VCC1, VCC2, VCC3,)3
Min Typ Max
-40 +85
165
2.7 5 5.25
Notes:
1.
2.
3.
TJ for 1e6 hours MTTF, CW Operation
TJ = TL + PDISS * RTH
Max recommended operational collector voltage
Unit
°C
°C
V
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
Condition
728MHz to 768MHz
VCC = 5.0V, Temp = 25°C, Optimized for -45dBc ACPR
at rated power
Frequency
Input Power
Gain
ACPR
P1dB
Output IP3
Detector Output Voltage
Input Return Loss
748 MHz
-2 dBm Max recommended continuous input power, VCC = 5.0V, Load VSWR = 2:1
35 dB Stage 1 bypassed
-48 dBc RF output power = 21dBm, WCDMA 3GPP 3.5, test model 1, 64 DPCH
31.5 dBm
40 dBm 18dBm per tone, 1MHz spacing, optimized for best ACPR
0.85 V CW RF output power = 21dBm with 0.3pF coupling capacitor
20 dB
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
DS140317
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
2 of 25


Part Number RFPA2016
Description 3-stage HBT power amplifier module
Maker RF Micro Devices
Total Page 25 Pages
PDF Download

RFPA2016 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 RFPA2013 GaAs HBT Power Amplifier
RF Micro Devices
2 RFPA2016 3-stage HBT power amplifier module
RF Micro Devices





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy