RFPA2172 Key Features
- 23.5dBm Typical Output Power
- 0dB to 28dB Variable Gain
- 45% Efficiency at Max Output
- On-Board Power Down Mode
- 2.4GHz to 2.5GHz Operation
- 902MHz to 928MHz Operation
- Part: RFPA2172
- Manufacturer: RF Micro Devices
- Size: 281.05 KB
Related RF Micro Devices Datasheets
| Part Number | Description |
|---|---|
| RFPA2189 | GaAs HBT POWER AMPLIFIER |
| RFPA2002 | Integrated Power Amplifier Module |
| RFPA2005 | Integrated Power Amplifier Module |
| RFPA2013 | GaAs HBT Power Amplifier |
| RFPA2016 | 3-stage HBT power amplifier module |
RFPA2172 Description
RFMD + TriQuint = Qorvo RFPA2172 ISM Band 3.6V, 250mW AMP with Analog Gain Control The RFPA2172 is a medium-power high efficiency amplifier IC targeting 3.6 V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45 GHz Bluetooth applications and frequency hopping/direct sequence...