RFPA2235 Key Features
- WCDMA Power at 2140MHz = 20dBm with -60dBc ACPR
- Gain = 13dB at 2140MHz
- P1dB = 32.5dBm at 2140MHz
- Externally Matched
- Power-down capability
- Class 1C HBM ESD Rating
- On-chip Input Power Detector
- Part: RFPA2235
- Manufacturer: RF Micro Devices
- Size: 665.38 KB
Related RF Micro Devices Datasheets
| Part Number | Description |
|---|---|
| RFPA2224 | Single-Stage Power Amplifier |
| RFPA2226 | 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER |
| RFPA2002 | Integrated Power Amplifier Module |
| RFPA2005 | Integrated Power Amplifier Module |
| RFPA2013 | GaAs HBT Power Amplifier |
RFPA2235 Description
The RFPA2235 is a single-stage InGaP HBT power amplifier. It exhibits excellent back-off characteristics making it ideal for ultra-linear driver amplifier applications. The RFPA2235 can also be optimized for use as a small-cell PA output stage.