RFPA5522 Key Features
- POUT = 23dBm, 5V, 11ac, 80MHz MCS9 @ 1.8% EVM
- POUT = 25dBm, 5V, 11n, 20/40 MHz, MCS7 @ 3%
- Typical Gain = 33dB
- 3.3v Functionality
- High PAE
- Integrated Regulator
- Input and Output Matched to 50Ω
- Part: RFPA5522
- Manufacturer: RF Micro Devices
- Size: 251.06 KB
Related RF Micro Devices Datasheets
| Part Number | Description |
|---|---|
| RFPA5512 | WiFi Integrated PA Module |
| RFPA5542 | WiFi Integrated PA Module |
| RFPA5026 | class AB Heterojunction Bipolar Transistor (HBT) power amplifier |
| RFPA5201E | WiFi Power Amplifier |
| RFPA5208 | WiFi Power Amplifier |
RFPA5522 Description
The integrated input and output 50Ω match greatly reduces the layout area, bill of materials and manufacturability cost in the customer application. The RFPA5522 is manufactured on an advanced InGaP heterojunction bipolar transistor (HBT) process and is capable of achieving linear powers up to 23dBm with an EVM <1.8% while maintaining excellent power added efficiency. The device is provided in a 4.0mm x 4.0mm x...