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RFPD2650 Datasheet - RF Micro Devices

RFPD2650 Hybrid Power Doubler amplifier

RFPD2650 GaAs/GaN Power Doubler Hybrid 45MHz to 1003MHz The RFPD2650 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT die and GaN HEMT die, has extremely high output capability, and is operated from 45MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. DC current of the device can be externally adjusted for optimum distortion performance versus power consumption over a wide range of output level. Curr.

RFPD2650 Features

* Excellent Linearity

* Superior Return Loss Performance

* Extremely Low Distortion

* Optimal Reliability

* Low Noise

* Unconditionally Stable Under All Terminations

* Extremely High Output Capability

* 22.5dB Min. Gain at 1003MHz

* 450mA Max. at 24VDC

* Extra

RFPD2650-RFMicroDevices.pdf

RFPD2650 Datasheet Preview — Preview of RFPD2650 PDF

Datasheet Details

Part number:

RFPD2650

Manufacturer:

RF Micro Devices

File Size:

570.97 KB

Description:

Hybrid power doubler amplifier.

RFPD2650 Distributor

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RFPD2650 RFPD2650 Hybrid Power Doubler amplifier RF Micro Devices