SPA1118Z Overview
RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in...
SPA1118Z Key Features
- High Linearity Performance
- +21dBm IS-95 Channel
- +48dBm OIP3 Typ
- On-Chip Active Bias Control
- Patented High Reliability
- Surface-Mountable Plastic