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SPF5122Z Datasheet Preview

SPF5122Z Datasheet

GaAs pHEMT LOW NOISE MMIC AMPLIFIER

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SPF5122Z
50MHz to
4000 MHz,
GaAs pHEMT
Low Noise
MMIC Ampli-
fier
SPF5122Z
50MHz to 4000MHz, GaAs pHEMT LOW NOISE
MMIC AMPLIFIER
Product Description
The SPF5122Z is a high performance pHEMT MMIC LNA designed for
operation from 50MHz to 4000MHz. The on-chip active bias network pro-
vides stable current over temperature and process threshold voltage vari-
ations. The SPF5122Z offers ultra-low noise figure and high linearity
performance in a gain block configuration. Its single-supply operation and
integrated matching networks make implementation remarkably simple. A
high maximum input power specification make it ideal for high dynamic
range receivers.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain and NF versus Frequency
Broadband Application Circuit (5V, 90mA)
25.0
4.00
22.0
3.50
19.0
3.00
16.0
2.50
13.0
2.00
10.0
1.50
7.0 1.00
4.0 Gain 0.50
NF
1.0 0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Frequency (GHz)
Features
Ultra-Low Noise Figure=0.60dB
at 900MHz
Gain=18.9dB at 900MHz
High Linearity: OIP3=40.5dBm
at 1900MHz
Channel Power=13.4dBm (-
65dBc IS95 ACPR, 880MHz)
P1dB=23.4dBm at 1900MHz
Single-Supply Operation: 5V at
IDQ = 90 mA
Flexible Biasing Options: 3-5V,
Adjustable Current
Broadband Internal Matching
Applications
Cellular, PCS, W-CDMA, ISM,
WiMAX Receivers
PA Driver Amplifier
Low Noise, High Linearity Gain
Block Applications
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Power Gain
17.2
18.9
20.2
dB 0.9GHz
11.2
12.2
14.4 dB 1.96GHz
Output Power at 1dB Compression
20.8
22.8
dBm
0.9 GHz
21.4
23.4
dBm
1.9 GHz
Output Third Order Intercept Point
35.1
38.1
dBm
0.9 GHz
37.2 40.5
dBm
1.9 GHz
Noise Figure
0.59
0.85
dB 0.9GHz
0.65
0.9 dB 1.9GHz
Input Return Loss
10 14.3
dB 0.9 GHz
21 dB 1.9GHz
Output Return Loss
14 17
dB 0.9GHz
13 dB 1.9GHz
Reverse Isolation
24.1 dB 0.9GHz
18.4
dB 1.9GHz
Device Operating Voltage
5.00
5.25
V
Device Operating Current
75 90 105 mA Quiescent
Thermal Resistance
65
°C/W
Junction to lead
Test Conditions: VD=5V, IDQ=90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, ZS=ZL=50, 25°C, Broadband Application Circuit
DS110408
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 12




RF Micro Devices

SPF5122Z Datasheet Preview

SPF5122Z Datasheet

GaAs pHEMT LOW NOISE MMIC AMPLIFIER

No Preview Available !

SPF5122Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (lD)
Max Device Voltage (VD)
Max RF Input Power
120 mA
5.5 V
27 dBm
Max Dissipated Power
660 mW
Max Junction Temperature (TJ)
Operating Temperature Range (TL)
Max Storage Temperature
150
-40 to + 85
-65 to +150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1B
Moisture Sensitivity Level (MSL)
MSL 1
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical RF Performance - Broadband Application Circuit with VD=5V, ID=90mA
Parameter Unit 0.1 0.4 0.9 1.5 1.9 2.2 2.5 3.5
GHz* GHz GHz GHz GHz GHz GHz GHz
Small Signal Gain dB 27.0 24.0 19.0 15.0 13.0 12.0 11.0
6.0
Noise Figure
dB 0.42 0.47 0.59 0.70 0.64 0.73 0.86 1.35
Output IP3
dBm
33.0
36.0
38.0
39.5
40.5
41.0
41.5
40.5
Output P1dB
dBm
22.3
22.7
23.0
23.2
23.4
23.7
23.9
22.2
Input Return Loss
dB
-9.5
-10.0
-14.5
-20.0
-21.0
-22.0
-22.5
-15.0
Output Return Loss dB -29.0
-19.5
-17.0
-14.0
-13.0
-12.5
-12.5
-7.5
Reverse Isolation
dB -32.0 -29.0
-24.0
-20.0
-18.5
-17.5
-16.5
-15.5
Test Conditions: VD=5V, IDQ=90mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50 *Bias Tee Data @ 100MHz
1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input.
Typical RF Performance - Broadband Application Circuit with VD=3V, ID=58mA
Parameter Unit 0.1 0.4 0.9 1.5 1.9 2.2 2.5 3.5
GHz* GHz GHz GHz GHz GHz GHz GHz
Small Signal Gain
dB 26.0
23.0
18.5
14.5
12.5
11.5
10.5
6.0
Noise Figure
dB 0.35
Output IP3
dBm
31.5
Output P1dB
dBm
18.8
Input Return Loss dB -8.0
0.44
33.0
18.9
-9.0
0.58
34.5
19.1
-13.0
0.65
36.0
19.4
-16.5
0.61
36.5
19.9
-18.5
0.69
37.0
20.2
-19.0
0.79
37.5
20.1
-19.0
1.25
37.0
18.9
-13.5
Output Return Loss
dB
-26.0
-28.5
-23.5
-18.0
-16.5
-16.0
-15.5
-9.0
Reverse Isolation
dB -31.0
-28.0
-23.0
-19.0
-17.5
-16.0
-15.0
-14.5
Test Conditions: VD=3V, IDQ=58mA, OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50, *Bias Tee Data @ 100MHz
1. Input RL can be improved in the 800MHz to 1000MHz band by adding a series inductor between the DC block and device input.
3.8
GHz
7.0
1.27
41.5
22.9
-11.5
-15.5
-13.5
3.8
GHz
6.5
1.19
37.5
19.2
-10.0
-14.0
-12.5
2 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110408


Part Number SPF5122Z
Description GaAs pHEMT LOW NOISE MMIC AMPLIFIER
Maker RF Micro Devices
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