SXA-389 Datasheet Medium Power Gaas Hbt Amplifier

Manufacturer: RF Micro Devices (now Qorvo)

Overview: SXA-389(Z) 400MHz to 2500 MHz ¼W Medium Power GaAs HBT Amplifier with Active Bias SXA-389(Z) 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89.

Datasheet Details

Part number	SXA-389
Manufacturer	RF Micro Devices (now Qorvo)
File Size	333.58 KB
Description	MEDIUM POWER GaAs HBT AMPLIFIER
Datasheet	SXA-389-RFMicroDevices.pdf

General Description

RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package.

These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to2500MHz cellular, ISM, WLL, PCS, W-CDMA applications.

Key Features

Available in RFMD Green, RoHS Compliant, and Pb-Free (Z Part Number).
On-Chip Active Bias Control, Single 5V Supply.
High Output 3rd Order Intercept:+42to+44dBm Typ.
High P1dB :+25dBm Typ.
High Gain:+19dB at 850MHz.
High Efficiency: Consumes Only 600 mW.
Patented High Reliability GaAs HBT Technology.
Surface-Mountable Power Plastic Package.

SXA-389 Distributor & Price

Compare SXA-389 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

Similar Datasheet

Part Number	Description	Manufacturer
SXA-389	Medium Power GaAs HBT Amplifier	Sirenza Microdevices
SXA-389B	Medium Power GaAs HBT Amplifier	Sirenza Microdevices
SXA-389BZ	Medium Power GaAs HBT Amplifier	Sirenza Microdevices
SXA-389Z	Medium Power GaAs HBT Amplifier	Sirenza Microdevices

More Datasheets from RF Micro Devices (now Qorvo)

Part Number	Description
SXA-389Z	MEDIUM POWER GaAs HBT AMPLIFIER
SXA389BZ	MEDIUM POWER GaAs HBT AMPLIFIER