SXA389BZ Datasheet, RF Micro Devices

* Lower RTH for increased MTTF 108 Hours at TLead=85C
* On-Chip Active Bias Control, Single 5V Supply
* Excellent Linearity:+43dBm Typ. OIP3 at 1960MHz
*.

Its high linearity makes it an ideal choice for multi-carrier as well as digital Optimum Technology applications. Mat.

RFMD’s SXA389BZ amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface mountable plas- tic package. These HBT MMICs are fabricated using molecular beam epi- taxial growth technology which produ.