SXA-389Z Datasheet PDF (MEDIUM POWER GaAs HBT AMPLIFIER)

SXA-389Z - MEDIUM POWER GaAs HBT AMPLIFIER

This page provides the datasheet information for the SXA-389Z, a member of the SXA-389 MEDIUM POWER GaAs HBT AMPLIFIER family.

Description

RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package.

Features

Available in RFMD Green, RoHS Compliant, and Pb-Free (Z Part Number).
On-Chip Active Bias Control, Single 5V Supply.
High Output 3rd Order Intercept:+42to+44dBm Typ.
High P1dB :+25dBm Typ.
High Gain:+19dB at 850MHz.
High Efficiency: Consumes Only 600 mW.
Patented High Reliability GaAs HBT Technology.
Surface-Mountable Power Plastic Package.

Datasheet Details

Part number	SXA-389Z
Manufacturer	RF Micro Devices
File Size	333.58 KB
Description	MEDIUM POWER GaAs HBT AMPLIFIER
Datasheet	SXA-389Z Datasheet
Additional preview pages of the SXA-389Z datasheet.

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Full PDF Text Transcription

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SXA-389(Z) 400MHz to 2500 MHz ¼W Medium Power GaAs HBT Amplifier with Active Bias SXA-389(Z) 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to2500MHz cellular, ISM, WLL, PCS, W-CDMA applications.

Published: Apr 1, 2016 |