SXA-389Z Datasheet (MEDIUM POWER GaAs HBT AMPLIFIER)

Part: SXA-389Z
Manufacturer: RF Micro Devices
Size: 333.58 KB

SXA-389Z Key Features

Available in RFMD Green, RoHS pliant, and Pb-Free (Z Part Number)
On-Chip Active Bias Control, Single 5V Supply
High Output 3rd Order Intercept:+42to+44dBm Typ
High P1dB :+25dBm Typ
High Gain:+19dB at 850MHz
High Efficiency: Consumes Only
Patented High Reliability GaAs
Surface-Mountable Power Plastic

Other SXA-389Z Datasheets

Manufacturer	Part Number	Description
Sirenza Microdevices	SXA-389Z	Medium Power GaAs HBT Amplifier
Sirenza Microdevices	SXA-389	Medium Power GaAs HBT Amplifier
Sirenza Microdevices	SXA-389B	Medium Power GaAs HBT Amplifier
Sirenza Microdevices	SXA-389BZ	Medium Power GaAs HBT Amplifier

View all SXA-389Z datasheets →

SXA-389Z Description

RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the...