Datasheet4U Logo Datasheet4U.com

SXA-389BZ - Medium Power GaAs HBT Amplifier

This page provides the datasheet information for the SXA-389BZ, a member of the SXA-389B Medium Power GaAs HBT Amplifier family.

Description

Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surfacemountable plastic package.

Features

  • Now Available in Leed Free, RoHS Compliant, & Green Packaging.
  • Lower Rth for increased MTTF 108 hrs. at TLead = 85°C.
  • On-chip Active Bias Control, Single 5V Supply.
  • Excellent Linearity: +43 dBm typ. OIP3 at 1960 MHz.
  • High P1dB : +25 dBm typ.
  • High Gain: +18.5 dB at 850 MHz.
  • Efficient: consumes only 575 mW Typical OIP3, P1dB, Gain 50 45 40 35 30 25 20 15 10 5 0 850 MHz 1960 MHz 2140 MHz OIP3 P1dB Gain dBm.

📥 Download Datasheet

Datasheet preview – SXA-389BZ

Datasheet Details

Part number SXA-389BZ
Manufacturer Sirenza Microdevices
File Size 171.68 KB
Description Medium Power GaAs HBT Amplifier
Datasheet download datasheet SXA-389BZ Datasheet
Additional preview pages of the SXA-389BZ datasheet.

📁 Similar Datasheet

  • SXA-389 - MEDIUM POWER GaAs HBT AMPLIFIER (RF Micro Devices)
  • SXA-389Z - MEDIUM POWER GaAs HBT AMPLIFIER (RF Micro Devices)
  • SXA10 - 10W Surface Mount DC/DC Converters (Artesyn Technologies)
  • SXA15 - High Efficiency DC/DC Converters (Artesyn Technologies)
  • SXA389BZ - MEDIUM POWER GaAs HBT AMPLIFIER (RF Micro Devices)
Other Datasheets by Sirenza Microdevices
  • SXA-389B - Medium Power GaAs HBT Amplifier
  • SXA-389 - Medium Power GaAs HBT Amplifier
  • SXA-389Z - Medium Power GaAs HBT Amplifier
  • SXA-3318B - Medium Power GaAs HBT Amplifier
  • SXA-3318BZ - Medium Power GaAs HBT Amplifier
  • SXA-289 - Medium Power GaAs HBT Amplifier

Full PDF Text Transcription

Click to expand full text
Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
Published: |