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SXA-389Z - Medium Power GaAs HBT Amplifier

This page provides the datasheet information for the SXA-389Z, a member of the SXA-389 Medium Power GaAs HBT Amplifier family.

Description

Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package.

Features

  • On-chip Active Bias Control, Single 5V Supply.
  • High Output 3rd Order Intercept: +42 to +44 dBm typ.
  • High P1dB : +25 dBm typ.
  • High Gain: +19 dB at 850 MHz.
  • High Efficiency: consumes only 600 mW.
  • Patented High Reliability GaAs HBT Technology.
  • Surface-Mountable Power Plastic Package dBm 25 20 15 10 5.

📥 Download Datasheet

Datasheet preview – SXA-389Z

Datasheet Details

Part number SXA-389Z
Manufacturer Sirenza Microdevices
File Size 157.31 KB
Description Medium Power GaAs HBT Amplifier
Datasheet download datasheet SXA-389Z Datasheet
Additional preview pages of the SXA-389Z datasheet.

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Full PDF Text Transcription

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Product Description Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.
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