• Part: SXA-389
  • Manufacturer: Sirenza Microdevices
  • Size: 157.31 KB
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SXA-389 Key Features

  • On-chip Active Bias Control, Single 5V Supply
  • High Output 3rd Order Intercept: +42 to +44 dBm typ
  • High P1dB : +25 dBm typ
  • High Gain: +19 dB at 850 MHz
  • High Efficiency: consumes only 600 mW
  • Patented High Reliability GaAs HBT Technology
  • Surface-Mountable Power Plastic Package

Other SXA-389 Datasheets

Manufacturer Part Number Description
RF Micro Devices Logo RF Micro Devices SXA-389 MEDIUM POWER GaAs HBT AMPLIFIER
RF Micro Devices Logo RF Micro Devices SXA-389Z MEDIUM POWER GaAs HBT AMPLIFIER

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SXA-389 Description

Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure...