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SXB4089Z - MEDIUM POWER HBT AMPLIFIER

Description

RFMD’s SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunction bipolar transistor (HBT) MMIC housed in low-cost, surface-mountable plastic package.

Features

  • On-Chip Active Bias Control, Single 5V Supply.
  • High Output 3rd Order Intercept:.
  • +45dBm Typ.
  • High P1dB: +28dBm Typ.
  • High Gain: +20dB at 880MHz.
  • Low RTH: 25°C/W Typ.
  • Robust 2000V ESD, Class 2.

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Datasheet Details

Part number SXB4089Z
Manufacturer RF Micro Devices
File Size 419.66 KB
Description MEDIUM POWER HBT AMPLIFIER
Datasheet download datasheet SXB4089Z Datasheet
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Full PDF Text Transcription

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SXB4089Z 400MHz to 2500MHz ½W Medium Power InGap/GaAs HBT Amplifier SXB4089Z 400MHz to 2500MHz ½W MEDIUM POWER InGaP/GaAs HBT AMPLIFIER Package: SOT-89 Product Description RFMD’s SXB4089Z amplifier is a high efficiency InGaP/GaAs heterojunction bipolar transistor (HBT) MMIC housed in low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to 2500MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
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