SXB2089Z Datasheet | RF Micro Devices

SXB2089Z 5MHz to 2500 MHz Medium Power In Ga P/Ga As HBT Amplifier 5MHz to 2500MHz MEDIUM POWER In Ga P/Ga As HBT AMPLIFIER Package: SOT-89 Product Description RFMD’s SXB2089Z amplifier is a high linearity In Ga P/Ga As Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5MHz to 2500MHz Cellular, ISM, WLL, PCS, and W-CDMA applications. It’s high linearity makes it an ideal choice for multi-carrier as well as digital applications. Optimum Technology Matching® Applied - Ga As HBT Ga As MESFET - In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT RF MEMS Typical IP3, P1d B, Gain 50 45 IP3 IP3 IP3 40 30 25 P1d B Gain P1d B P1d B Gain Gain 880 MHz 1960 MHz 2140 MHz Features - High OIP3:+43d Bm at 1960 MHz - P1d B:24d Bm - High Linearity/ACP Perfor- mance - Robust 2000V ESD, Class 2 - SOT-89 Package Applications - PA Driver Amplifier - IF Amplifier - Cellular, PCS, ISM, WLL, -...