SXB4089Z Datasheet | RF Micro Devices

SXB4089Z 400MHz to 2500MHz ½W Medium Power In Gap/Ga As HBT Amplifier 400MHz to 2500MHz ½W MEDIUM POWER In Ga P/Ga As HBT AMPLIFIER Package: SOT-89 Product Description RFMD’s SXB4089Z amplifier is a high efficiency In Ga P/Ga As heterojunction bipolar transistor (HBT) MMIC housed in low-cost, surface-mountable plastic package. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to 2500MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Optimum Technology Matching® Applied - Ga As HBT Ga As MESFET - In Ga P HBT Si Ge Bi CMOS Si Bi CMOS Si Ge HBT Ga As p HEMT Si CMOS Si BJT Ga N HEMT RF MEMS d Bm Typical IP3, P1d B, Gain 50 45 OIP3 40 P1d B 35 Gain 880 MHz 1960 MHz 2140 MHz Features - On-Chip Active Bias Control, Single 5V Supply - High Output 3rd Order Intercept: - +45d Bm Typ. - High P1d B: +28d Bm Typ. - High Gain: +20d B at 880MHz - Low RTH: 25°C/W Typ. - Robust 2000V ESD, Class 2 Applications - WCDMA, PCS, Cellular Systems - Multi-Carrier Applications Parameter Specification Min. Typ. Max. Unit Condition...