• Part: 2SAR562F3
  • Description: Middle Power Transistors
  • Category: Transistor
  • Manufacturer: ROHM
  • Size: 1.02 MB
Download 2SAR562F3 Datasheet PDF
ROHM
2SAR562F3
2SAR562F3 is Middle Power Transistors manufactured by ROHM.
PNP -6.0A -30V Middle Power Transistor Parameter VCEO IC Value -30V -6A l Features 1) Suitable for Middle Power Driver. 2) Low VCE(sat)   VCE(sat)=-300m V(Max.).   (IC/IB=-3A/-150m A) 3) High collector current.   IC=-6A(max),ICP=-7A(max) 4) Leadless small SMD package (HUML2020L3)   Excellent thermal and electrical conductivity. l Outline   DFN2020-3S   HUML2020L3 l Inner circuit           Datasheet l Application LOW FREQUENCY AMPLIFIER l Packaging specifications Part No. Package Package size DFN2020-3S (HUML2020L3) Taping code Reel size Tape width Quantity (mm) (mm) (pcs) Marking TR 180                                                                                          .rohm. © 2019 ROHM Co., Ltd. All rights reserved. 1/6 - Rev.003                            Datasheet l Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP- 1 PD- 2 PD- 3 Tj Tstg Values -30 -30 -6 -6 -7 1.0 2.1 150 -55 to...