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2SAR512P - Midium Power Transistors

Key Features

  • 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max. ) (IC / IB= -700mA / -35mA) 2) High speed switching.

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Datasheet Details

Part number 2SAR512P
Manufacturer ROHM
File Size 217.41 KB
Description Midium Power Transistors
Datasheet download datasheet 2SAR512P Datasheet

Full PDF Text Transcription for 2SAR512P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SAR512P. For precise diagrams, and layout, please refer to the original PDF.

Medium Power Transistors (−30V / −2A) 2SAR512P Structure PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (I...

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tures 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA) 2) High speed switching Applications Driver Packaging specifications Package Type Code Taping T100 Basic ordering unit (pieces) 1000 2SAR512P Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg -30 -30 -6 -2 -4 0.5 2 150 -55 to 150 *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted

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