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2SAR513P - Midium Power Transistors

Key Features

  • s 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max. ) (IC / IB= -500mA / -25mA) 2) High speed switching.

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Datasheet Details

Part number 2SAR513P
Manufacturer ROHM
File Size 221.37 KB
Description Midium Power Transistors
Datasheet download datasheet 2SAR513P Datasheet

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Full PDF Text Transcription for 2SAR513P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SAR513P. For precise diagrams, tables, and layout, please refer to the original PDF.

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Midium Power Transistors (-50V / -1A) 2SAR513P  Structure PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) 2) High speed switching  Applications Driver  Packaging specifications Package Type Code Taping T100 Basic ordering unit (pieces) 1000 2SAR513P   Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg -50 -50 -6 -1 -2 0.5 2 150 -55 to 150 *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.