ROHM Semiconductor 2SAR513P
Midium Power Transistors
| Part No. | 2SAR513P |
|---|---|
| Datasheet | 2SAR513P Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Midium Power Transistors |
| Buy | Stock & Price |
FEATURES
1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500mA / -25mA) 2) High speed switching●
APPLICATIONS
Driver● Packaging specifications Package Type Code Taping T100 Basic ordering unit (pieces) 1000 2SAR513P
● Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg -50 -50 -6 -1 -2 0.5 2 150 -55 to 150 *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³) Unit V V V A A W W C C
● Dimensions (Unit : mm) (1) (2) (3) Abbreviated symbol : MC
● Inner circuit (Unit : mm) (1) Base (2) Collector (3) Emitter ○c 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.12 - Rev.A 2SAR513P
●Electrical characteristic (Ta = 25C) Parameter Symbol Collector-emitter breakdown voltage BVCEO Col...
