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Rohm Semiconductor Electronic Components Datasheet

2SC5876U3 Datasheet

Medium power transistor

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2SC5876U3
Medium power transistor (60V, 0.5A)
Parameter
VCEO
IC
Value
60V
500mA
lFeatures
1)High speed switching.
  (Tf:Typ.:80ns at IC=500mA)
2)Low saturation voltage, typically
  (Typ.:150mV at IC=100mA, IB=10mA)
3)Strong discharge power for inductive load and
  capacitance load.
4)Complements the 2SA2088U3.
lOutline
  SOT-323
  SC-70
UMT3
lInner circuit
 
 
 
 
 
Datasheet
lApplication
LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING
lPackaging specifications
Part No.
Package
2SC5876U3
SOT-323
(UMT3)
Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
2021 T106 180
8
3000
VS
                                                                                        
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
1/6
20180614 - Rev.001


Rohm Semiconductor Electronic Components Datasheet

2SC5876U3 Datasheet

Medium power transistor

No Preview Available !

2SC5876U3
          
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
                Datasheet
Symbol
VCBO
VCEO
VEBO
IC
ICP*1
PD*2
Tj
Tstg
Values
60
60
6
500
1.0
200
150
-55 to +150
Unit
V
V
V
mA
A
mW
lElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
Conditions
BVCBO IC = 100μA
BVCEO IC = 1mA
BVEBO IE = 100μA
ICBO VCB = 40V
IEBO VEB = 4V
VCE(sat) IC = 100mA, IB = 10mA
hFE VCE = 2V, IC = 50mA
f
*3
T
VCE = 10V, IE = -100mA,
f = 100MHz
Cob
VCB = 10V, IE = 0mA,
f = 1MHz
Min.
60
60
6
-
-
-
120
-
-
Values
Typ.
-
-
-
-
-
150
-
300
5
Max.
-
-
-
1
1
300
390
-
-
Turn-On time
Storage time
Fall time
ton IC = 500mA,
IB1 = 50mA,
tstg
IB2 = -50mA,
VCC 25V,
tf
RL = 50Ω
See test circuit
- 70 -
- 130 -
- 80 -
                                        
hFE values are calssified as follows :
rank Q
R
hFE
120-270
180-390
                              
---
---
Unit
V
V
V
μA
μA
mV
-
MHz
pF
ns
ns
ns
*1 Pw=10ms
*2 Each terminal mounted on a reference land.
*3 Pulsed
                                            
 
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2/6
                                        
20180614 - Rev.001


Part Number 2SC5876U3
Description Medium power transistor
Maker ROHM
Total Page 9 Pages
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