ROHM Semiconductor 2SC5876
Medium power transistor
2SC5876 Medium power transistor (60V, 0.5A) Parameter VCEO IC Value 60V 500mA lFeatures 1)High speed switching. (Tf:Typ.:80ns at IC=500mA) 2)Low saturation voltage, typically (Typ.:150mV at IC=100mA, IB=10mA) 3)Strong discharge power for inductive load and capacitance load. 4)Complements the 2SA2088. lOutline UMT3 2SC5876 SOT-323 lInner circuit Datasheet lApplication LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specifications Part No. Package 2SC5876 UMT3 Package size 2021 Taping code Reel size Tape width (mm) (mm) Basic ordering unit.(pcs) Marking T106 180 8 3000 VS © 2015 ROHM Co., Ltd. All rights reserved. 1/6 20150403 - Rev.001 2SC5876 lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Datasheet Symbol VCBO VCEO VEBO IC ICP*1 PD*2 Tj Tstg Values 60 60 6 500 1.0 200 150 -55 to +150 Unit V V V mA A mW ℃ ℃ lElectrical char...