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Rohm Semiconductor Electronic Components Datasheet

2SD2704K Datasheet

Transistor

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For Muting (20V, 0.3A)
2SD2704K
Features
1) High DC current gain.
hFE = 820 to 2700
2) High emitter-base voltage.
VEBO = 25V (Min.)
3) Low Ron
Ron= 0.7(Typ.)
Structure
Epitaxial planar type
NPN silicon transistor
Packaging specifications
Package
Taping
Code
T146
Type
Basic ordering 3000
unit (pieces)
2SD2704K
Dimensions (Unit : mm)
2SD2704K
SOT-346
2.9
0.4
(3)
1.1
0.8
ROHM : SMT3
EIAJ : SC-59
(2) (1)
0.95 0.95
1.9
0.15
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : XL
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
25
Collector current
IC 0.3
Collector power dissipation
Junction temperature
PC
Tj
0.2
150
Storage temperature
Tstg 55 to +150
Unit
V
V
V
A
W
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current transfer ratio
Transition frequency
Output capacitance
hFE
fT
Cob
Output On-resistance
Measured using pulse current
Ron
Min.
50
20
25
820
Typ.
50
35
3.9
0.7
Max.
0.1
0.1
100
2700
Unit
V
V
V
μA
μA
mV
MHz
pF
Ω
Conditions
IC=10μA
IC=1mA
IE=10μA
VCB=50V
VEB=25V
IC/IB=30mA/3mA
VCE=2V, IC=4mA
VCE=6V, IE= −4mA, f=10MHz
VCB=10V, IE=0A, f=1MHz
IB=5mA, Vi=100mV(rms), f=1kHz
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
1/3
2012.01 - Rev.C


Rohm Semiconductor Electronic Components Datasheet

2SD2704K Datasheet

Transistor

No Preview Available !

2SD2704K
Data Sheet
Electrical characteristic curves
1000
VCE=2V
Ta=125°C
100
25°C
10 40°C
0.1
1000
100
10
0.1
Ta=125°C
25°C
VCE=6V
40°C
10000
Ta=125°C
1000
100
Ta=25°C
Ta= −40°C
VCE=2V
0.1
0 0.2 0.4 0.6 0.8 1 1.2
BASE TO EMITTER VOLTAGE : VBE(ON) (V)
Fig.1 Grounded emitter propagation
characteristics ( Ι )
10000
VCE=6V
Ta=125°C
1000
Ta=25°C
Ta= −40°C
100
10
1 10 100 1000
COLLECTOR CURRENT : IC (mA)
10000
Fig.4 DC current gain
vs. collector current ( )
IC/IB=50/1
1000
Ta=125°C
100
Ta=25°C
10 Ta= −40°C
0.1
0 0.2 0.4 0.6 0.8 1 1.2
BASE TO EMITTER VOLTAGE : VBE(ON) (V)
Fig.2 Grounded emitter propagation
characteristics ( ΙΙ )
10
1 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain
vs. collector current ( )
10000
IC/IB=10/1
10000
IC/IB=20/1
1000 1000
100 Ta=125°C
Ta=125°C
100
Ta=25°C
10
Ta= −40°C
1
1 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( )
Ta=25°C
10
Ta= −40°C
1
1 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( )
10000
IC/IB=10/1
10000
IC/IB=20/1
1000 Ta= −40°C
Ta=25°C
Ta=125°C
1000 Ta= −40°C
Ta=25°C
Ta=125°C
1
1 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( )
100
1
10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.8 Base-emitter saturation voltage
vs. collector current ( )
100
1 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.9 Base-emitter saturation voltage
vs. collector current ( )
www.rohm.com
c 2012 ROHM Co., Ltd. All rights reserved.
2/3
2012.01 - Rev.C


Part Number 2SD2704K
Description Transistor
Maker ROHM
Total Page 4 Pages
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