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2SD2704K - Transistor

Key Features

  • 1) High DC current gain. hFE = 820 to 2700 2) High emitter-base voltage. VEBO = 25V (Min. ) 3) Low Ron Ron= 0.7 (Typ. ).
  • Structure Epitaxial planar type NPN silicon transistor.
  • Packaging specifications Package Taping Code T146 Type Basic ordering 3000 unit (pieces) 2SD2704K.
  • Dimensions (Unit : mm) 2SD2704K SOT-346 2.9 1.1 0.4 0.8 (3) 1.6 2.8 0.3Min. ROHM : SMT3 EIAJ : SC-59 (2) (1) 0.95 0.95 0.15 1.9 (1) Emitter (2) Base (3) Collector Each lead has same dimensi.

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Datasheet Details

Part number 2SD2704K
Manufacturer ROHM
File Size 544.68 KB
Description Transistor
Datasheet download datasheet 2SD2704K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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For Muting (20V, 0.3A) 2SD2704K Features 1) High DC current gain. hFE = 820 to 2700 2) High emitter-base voltage. VEBO = 25V (Min.) 3) Low Ron Ron= 0.7 (Typ.) Structure Epitaxial planar type NPN silicon transistor Packaging specifications Package Taping Code T146 Type Basic ordering 3000 unit (pieces) 2SD2704K Dimensions (Unit : mm) 2SD2704K SOT-346 2.9 1.1 0.4 0.8 (3) 1.6 2.8 0.3Min. ROHM : SMT3 EIAJ : SC-59 (2) (1) 0.95 0.95 0.15 1.9 (1) Emitter (2) Base (3) Collector Each lead has same dimensions Abbreviated symbol : XL Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 0.