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2SD2705S - Transistors

This page provides the datasheet information for the 2SD2705S, a member of the 2SD2704K Transistors family.

Datasheet Summary

Features

  • 1) High DC current gain. hFE = 820 to 2700 2) High emitter-base voltage. VEBO = 25V (Min. ) 3) Low Ron Ron= 0.7Ω (Typ. ) zExternal dimensions (Unit : mm) 2SD2704K 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) 0.2 1.1+.
  • 0.1 0.8±0.1 (3) +0.1 0.15.
  • 0.1 0.06 0.4 +.
  • 0.05 All terminals have same dimensions 0.2 1.6+.
  • 0.1 2.8±0.2 0 to 0.1 0.3 to 0.6 zStructure Epitaxial planar type NPN silicon transistor ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol: XL (1) Emitter (2) Base (3).

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Datasheet preview – 2SD2705S

Datasheet Details

Part number 2SD2705S
Manufacturer ROHM
File Size 110.14 KB
Description Transistors
Datasheet download datasheet 2SD2705S Datasheet
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Full PDF Text Transcription

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2SD2704K / 2SD2705S Transistors For Muting (20V, 0.3A) 2SD2704K / 2SD2705S zFeatures 1) High DC current gain. hFE = 820 to 2700 2) High emitter-base voltage. VEBO = 25V (Min.) 3) Low Ron Ron= 0.7Ω (Typ.) zExternal dimensions (Unit : mm) 2SD2704K 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) 0.2 1.1+ −0.1 0.8±0.1 (3) +0.1 0.15 − 0.1 0.06 0.4 + −0.05 All terminals have same dimensions 0.2 1.6+ −0.1 2.8±0.2 0 to 0.1 0.3 to 0.6 zStructure Epitaxial planar type NPN silicon transistor ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol: XL (1) Emitter (2) Base (3) Collector 2SD2705S 4±0.2 2±0.2 3±0.2 (15Min.) 0.15 0.45+ −0.05 3Min. www.DataSheet4U.com 0.4 2.5 + −0.1 5 0.5 0.15 0.45 + −0.
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