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For Muting (20V, 0.3A)
2SD2704K
Features 1) High DC current gain.
hFE = 820 to 2700 2) High emitter-base voltage.
VEBO = 25V (Min.) 3) Low Ron
Ron= 0.7 (Typ.)
Structure Epitaxial planar type NPN silicon transistor
Packaging specifications
Package
Taping
Code
T146
Type
Basic ordering 3000 unit (pieces)
2SD2704K
Dimensions (Unit : mm)
2SD2704K
SOT-346
2.9
1.1
0.4
0.8
(3)
1.6 2.8 0.3Min.
ROHM : SMT3 EIAJ : SC-59
(2)
(1)
0.95 0.95 0.15
1.9
(1) Emitter (2) Base (3) Collector
Each lead has same dimensions Abbreviated symbol : XL
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
Collector current
IC
0.