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BM60213FV-C - High and Low Side Driver

Description

The BM60213FV-C is high and low side drive IC which operates up to 1200 V with bootstrap operation, which can drive N-channel power MOSFET and IGBT.

Under-voltage Lockout (UVLO) function is built-in.

High-Side Floating Supply Voltage: Maximum Gate Drive Voltage:

Features

  • AEC-Q100 Qualified(Note 1).
  • High-Side Floating Supply Voltage 1200 V.
  • Under Voltage Lockout Function.
  • 3.3 V and 5.0 V Input Logic Compatible (Note 1) Grade 1 Package SSOP-B20W W(Typ) x D(Typ) x H(Max) 6.50 mm x 8.10 mm x 2.01 mm.

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Datasheet Details

Part number BM60213FV-C
Manufacturer ROHM
File Size 1.96 MB
Description High and Low Side Driver
Datasheet download datasheet BM60213FV-C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Datasheet 1200 V High Voltage High and Low Side Driver BM60213FV-C General Description The BM60213FV-C is high and low side drive IC which operates up to 1200 V with bootstrap operation, which can drive N-channel power MOSFET and IGBT. Under-voltage Lockout (UVLO) function is built-in. Key Specifications  High-Side Floating Supply Voltage:  Maximum Gate Drive Voltage:  Turn ON/OFF Time:  Logic Input Minimum Pulse Width: 1200 V 24 V 75 ns (Max) 60 ns (Max) Features  AEC-Q100 Qualified(Note 1)  High-Side Floating Supply Voltage 1200 V  Under Voltage Lockout Function  3.3 V and 5.0 V Input Logic Compatible (Note 1) Grade 1 Package SSOP-B20W W(Typ) x D(Typ) x H(Max) 6.50 mm x 8.10 mm x 2.
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