BM60210FV-C - 1200V High Voltage High & Low-side / Gate Driver

Description

The BM60210FV-C is a monolithic high and low side gate drive IC, which can be drive high speed power MOSFET and IGBT driver with bootstrap operation.

The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200V.

Features

Floating Channels for Bootstrap Operation to +1200V.
Gate drive supply range from 10V to24V.
Built-in Under Voltage Lockout for Both Channels.
3.3V and 5.0V Input Logic Compatible.
Ac.

ROHM

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Datasheet Details

Part number	BM60210FV-C
Manufacturer	ROHM
File Size	917.51 KB
Description	1200V High Voltage High & Low-side / Gate Driver
Datasheet	BM60210FV-C Datasheet
Additional preview pages of the BM60210FV-C datasheet.

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Full PDF Text Transcription

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Datasheet 1200V High Voltage High & Low-side, Gate Driver BM60210FV-C General Description The BM60210FV-C is a monolithic high and low side gate drive IC, which can be drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200V. It incorporates the fault signal output functions, Under-voltage Lockout (UVLO) function and Miller clamp function.

Published: Nov 19, 2016 |