BM60213FV-C
Description
The BM60213FV-C is high and low side drive IC which operates up to 1200 V with bootstrap operation, which can drive N-channel power MOSFET and IGBT. Under-voltage Lockout (UVLO) function is built-in.
Key Specifications
- High-Side Floating Supply Voltage:
- Maximum Gate Drive Voltage:
- Turn ON/OFF Time:
- Logic Input Minimum Pulse Width:
1200 V 24 V
75 ns (Max) 60 ns (Max)
Features
- AEC-Q100 Qualified(Note 1)
- High-Side Floating Supply Voltage 1200 V
- Under Voltage Lockout Function
- 3.3 V and 5.0 V Input Logic patible
(Note 1) Grade 1
Package SSOP-B20W
W(Typ) x D(Typ) x H(Max) 6.50 mm x 8.10 mm x 2.01 mm
Applications
- MOSFET Gate Driver
- IGBT Gate Driver
Typical Application Circuit
VCCB
ENA INA INB
CVCCB
GND1
VREG
CVREG
VCCB OUTBH
OUTBL
PGND
GND1
UVLO
Pulse Generator
Regulator
Predriver
UVLO...
