MG6303WZ
Datasheet
lDesign Assurance
Parameter
Symbol
Conditions
Reverse Bias Safe Operating
Area
IC = 120A, VCC = 520V,
RBSOA*3 VP = 650V, VGE = 15V,
RG = 100Ω, Tj = 175℃
*3 Design assurance without measurement
Values
Min. Typ. Max.
FULL SQUARE
Unit
-
lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Unit
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650 -
-
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage
Current
IGES VGE = ±30V, VCE = 0V
-
- ±200 nA
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 20.0mA
5.0
6.0
7.0
Collector - Emitter Saturation
Voltage
IC = 30A, VGE = 15V,
VCE(sat)*3 Tj = 25°C
Tj = 175°C
Input Capacitance
Cies VCE = 30V,
Output Capacitance
Coes VGE = 0V,
Reverse transfer Capacitance Cres f = 1MHz
Total Gate Charge
Qg VCE = 400V,
Gate - Emitter Charge
Qge IC = 30A,
Gate - Collector Charge
Qgc VGE = 15V
*3 Design assurance without measurement
- 1.5 1.9
- 1.85 -
- 2530 -
- 65 -
- 46 -
- 84 -
- 17 -
- 31 -
V
V
pF
nC
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2019.08 - Rev.A
