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Rohm Semiconductor Electronic Components Datasheet

MG6303WZ Datasheet

Insulated Gate Bipolar Transistor

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MG6303WZ
650V 30A Insulated Gate Bipolar Transistor
VCES
IC (Nominal)
VCE(sat) (Typ.)
Max. Possible Chips per Wafer
650V
30A
1.5V
1137pcs
lFeatures
1) Trench Light Punch Through Type
2) Low Collector - Emitter Saturation Voltage
3) High Speed Switching
4) Low Switching Loss & Soft Switching
lApplication
PFC
UPS
Welding
Solar Inverter
IH
lOutline
Wafer
lInner Circuit
(2)
(1)
(3)
lAbsolute Maximum Ratings
Parameter
Collector - Emitter Voltage, Tj = 25°C
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
Operating Junction Temperature
*1 Depending on thermal properties of assembly
*2 Pulse width limited by Tjmax.
Symbol
VCES
VGES
IC*1
ICP*2
Tj
Datasheet
(1) Gate
(2) Collector
(3) Emitter
Value
650
±30
*1)
120
-40 to +175
Unit
V
V
A
A
°C
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
1/3
2019.08 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

MG6303WZ Datasheet

Insulated Gate Bipolar Transistor

No Preview Available !

MG6303WZ
Datasheet
lDesign Assurance
Parameter
Symbol
Conditions
Reverse Bias Safe Operating
Area
IC = 120A, VCC = 520V,
RBSOA*3 VP = 650V, VGE = 15V,
RG = 100Ω, Tj = 175
*3 Design assurance without measurement
Values
Min. Typ. Max.
FULL SQUARE
Unit
-
lElectrical Characteristics (at Tj = 25°C unless otherwise specified, in case of TO-247N package)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Unit
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
650 -
-
V
Collector Cut - off Current
ICES VCE = 650V, VGE = 0V
-
- 10 μA
Gate - Emitter Leakage
Current
IGES VGE = ±30V, VCE = 0V
-
- ±200 nA
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 20.0mA
5.0
6.0
7.0
Collector - Emitter Saturation
Voltage
IC = 30A, VGE = 15V,
VCE(sat)*3 Tj = 25°C
Tj = 175°C
Input Capacitance
Cies VCE = 30V,
Output Capacitance
Coes VGE = 0V,
Reverse transfer Capacitance Cres f = 1MHz
Total Gate Charge
Qg VCE = 400V,
Gate - Emitter Charge
Qge IC = 30A,
Gate - Collector Charge
Qgc VGE = 15V
*3 Design assurance without measurement
- 1.5 1.9
- 1.85 -
- 2530 -
- 65 -
- 46 -
- 84 -
- 17 -
- 31 -
V
V
pF
nC
www.rohm.com
© 2019 ROHM Co., Ltd. All rights reserved.
2/3
2019.08 - Rev.A


Part Number MG6303WZ
Description Insulated Gate Bipolar Transistor
Maker ROHM
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