MG7210WZ - Insulated Gate Bipolar Transistor

ROHM

Key Features

1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) Short Circuit Withstand Time 10μs lOutline Wafer lInner Circuit (2) (1) l.

MG7210WZ insulated gate bipolar transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	MG7210WZ
Manufacturer	ROHM
File Size	481.01 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	MG7210WZ Datasheet

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Full PDF Text Transcription (Reference)

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MG7210WZ 1200V 25A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 1200V 25A 1.7V 407pcs lFeatures 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) Short Circuit Withstand Time 10μs lOutline Wafer lInner Circuit (2) (1) lApplication General Inverter for Automotive and Industrial Use Heater for Automotive (3) Datasheet (1) Gate (2) Collector (3) Emitter lAbsolute Maximum Ratings Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VCES VGES IC*1 ICP*2 Tj Value 1200 ±30 *1) 75 -40 to +175 Unit V V A A °C www.rohm.