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MG7213WZ - 1200V 75A Insulated Gate Bipolar Transistor

Key Features

  • 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) Short Circuit Withstand Time 10μs.
  • Outline Wafer.
  • Inner Circuit (2) (1) (3).

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Datasheet Details

Part number MG7213WZ
Manufacturer ROHM
File Size 1.52 MB
Description 1200V 75A Insulated Gate Bipolar Transistor
Datasheet download datasheet MG7213WZ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MG7213WZ 1200V 75A Insulated Gate Bipolar Transistor VCES IC (Nominal) VCE(sat) (Typ.) Max. Possible Chips per Wafer 1200V 75A 1.7V 152pcs Features 1) Trench Light Punch Through Type 2) Low Collector - Emitter Saturation Voltage 3) Short Circuit Withstand Time 10μs Outline Wafer Inner Circuit (2) (1) (3) Application General Inverter for Industrial Use Datasheet (1) Gate (2) Collector (3) Emitter Absolute Maximum Ratings Parameter Collector - Emitter Voltage, Tj = 25°C Gate - Emitter Voltage Collector Current Pulsed Collector Current Operating Junction Temperature *1 Depending on thermal properties of assembly *2 Pulse width limited by Tjmax. Symbol VCES VGES IC*1 ICP*2 Tj Value Unit 1200 V ±30 V *1) A 225 A -40 to +175 °C www.rohm.com © 2021 ROHM Co., Ltd.